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IXFT12N100F
the part number is IXFT12N100F
Part
IXFT12N100F
Manufacturer
Description
MOSFET N-CH 1000V 12A TO268
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 1000 V
Vgs(th)(Max)@Id 1.05Ohm @ 6A, 10V
Vgs 10V
FETFeature ±20V
DraintoSourceVoltage(Vdss) TO-268
OperatingTemperature -
DriveVoltage(MaxRdsOn N-Channel
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 300W (Tc)
InputCapacitance(Ciss)(Max)@Vds 77 nC @ 10 V
Series HiPerRF™
Qualification
SupplierDevicePackage -55°C ~ 150°C (TJ)
FETType 12A (Tc)
Technology Surface Mount
Current-ContinuousDrain(Id)@25°C TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(Max) 5.5V @ 4mA
MinRdsOn) MOSFET (Metal Oxide)
Package Tube
PowerDissipation(Max) 2700 pF @ 25 V
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