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IXFT4N100Q
the part number is IXFT4N100Q
Part
IXFT4N100Q
Manufacturer
Description
MOSFET N-CH 1000V 4A TO-268
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 1000V
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Packaging: Tube
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-268
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: HiPerFET™
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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