IXTJ36N20

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Specification

Drain to Source Voltage (Vdss):	200V
Power Dissipation (Max):	300W (Tc)
Package / Case:	TO-3P-3 Full Pack
Mounting Type:	Through Hole
Packaging:	Tube
Supplier Device Package:	TO-247AD
Vgs(th) (Max) @ Id:	4V @ 4mA
Drive Voltage (Max Rds On, Min Rds On):	10V
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Detailed Description:	N-Channel 200V 36A (Tc) 300W (Tc) Through Hole TO-247AD
FET Feature:	-
Moisture Sensitivity Level (MSL):	1 (Unlimited)
Email:	sale@shengyuic.com
FET Type:	N-Channel
Series:	HiPerFET™
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:	2970pF @ 25V
Vgs (Max):	±20V
Rds On (Max) @ Id, Vgs:	70 mOhm @ 18A, 10V
Technology:	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 10V
Operating Temperature:	-55°C ~ 150°C (TJ)