shengyuic
shengyuic
sale@shengyuic.com
NDC632P
the part number is NDC632P
Part
NDC632P
Manufacturer
Description
MOSFET P-CH 20V 2.7A SSOT-6
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 1.6W (Ta)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Packaging: Original-Reel®
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: P-Channel 20V 2.7A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: P-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Other Names: NDC632PDKR
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Vgs (Max): -8V
Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For NDC632P
NDC631N

ON Semiconductor

MOSFET N-CH 20V 4.1A SSOT-6

NDC631N

onsemi

MOSFET N-CH 20V 4.1A SUPERSOT6

NDC631N

Fairchild Semiconductor

MOSFET N-CH 20V 4.1A SUPERSOT6

NDC632P

ON Semiconductor

MOSFET P-CH 20V 2.7A SSOT-6

NDC632P

onsemi

MOSFET P-CH 20V 2.7A SUPERSOT6

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!