shengyuic
shengyuic
sale@shengyuic.com
NP110N03PUG-E1-AY
the part number is NP110N03PUG-E1-AY
Part
NP110N03PUG-E1-AY
Description
MOSFET N-CH 30V 110A TO263
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 380 nC @ 10 V
FETFeature 1.8W (Ta), 288W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-263
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 110A (Tc)
Vgs(Max) 24600 pF @ 25 V
MinRdsOn) 1.5mOhm @ 55A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) 175°C (TJ)
Related Parts For NP110N03PUG-E1-AY
NP11

Apex Tool Group

PLIERS,11",NAIL PULLING

NP1100SAT3G

ON Semiconductor

THYRISTOR 90V 50A SMB

NP1100SBMCT3G

onsemi

THYRISTOR 90V 250A DO214AA

NP1100SBT3G

onsemi

THYRISTOR 90V 80A DO214AA

NP1100SCMCT3G

onsemi

THYRISTOR 90V 400A DO214AA

NP1100SCT3G

onsemi

THYRISTOR 90V 100A DO214AA

NP110N03PUG-E1-AY

Renesas Electronics Corporation

MOSFET N-CH 30V 110A TO263

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!