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NTB52N10T4G
the part number is NTB52N10T4G
Part
NTB52N10T4G
Manufacturer
Description
MOSFET N-CH 100V 52A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 2W (Ta), 178W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 100V 52A (Tc) 2W (Ta), 178W (Tc) Surface Mount D2PAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Other Names: NTB52N10T4GOS NTB52N10T4GOS-ND NTB52N10T4GOSTR
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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