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NTGD1100LT1G
Part Noglobal
Part NoNTGD1100LT1G
Manufactureronsemi
DescriptionMOSFET N/P-CH 8V 3.3A 6-TSOP
Datasheet
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ECAD Module
Specification
TypeGeneral Purpose
Width1.7mm
Height1mm
Length3.1mm
ECCN CodeEAR99
InterfaceOn/Off
Lead FreeLead Free
PackagingTape & Reel (TR)
Pin Count6
Published2001
Resistance40MOhm
Output TypeP-Channel
Part StatusActive
Pbfree Codeyes
RoHS StatusROHS3 Compliant
SubcategoryOther Transistors
Switch TypeGeneral Purpose
Rds On (Typ)40m Ω
JESD-609 Codee3
Mounting TypeSurface Mount
Surface MountYES
Terminal FormGULL WING
Current Rating3.3A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Pins6
Operating ModeENHANCEMENT MODE
Package / CaseSOT-23-6 Thin, TSOT-23-6
Voltage - Load1.8V~8V
Terminal FinishTin (Sn)
Base Part NumberNTGD1100L
Lifecycle StatusACTIVE (Last Updated: 4 days ago)
Factory Lead Time2 Weeks
Number of Outputs1
Power Dissipation830mW
Number of Elements2
Voltage - Rated DC20V
Radiation HardeningNo
Output ConfigurationHigh Side
Ratio - Input:Output1:1
Element ConfigurationDual
Max Power Dissipation830mW
Operating Temperature-55°C~150°C TJ
Number of Terminations6
Transistor ApplicationSWITCHING
Drain to Source Resistance80mOhm
Transistor Element MaterialSILICON
Gate to Source Voltage (Vgs)8V
Continuous Drain Current (ID)3.3A
Peak Reflow Temperature (Cel)260
Drain to Source Voltage (Vdss)8V
Moisture Sensitivity Level (MSL)1 (Unlimited)
Drain to Source Breakdown Voltage8V
Time@Peak Reflow Temperature-Max (s)40
In Stock:
20105
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.52 | |
| 10 | 0.5096 | |
| 100 | 0.494 | |
| 1000 | 0.4784 | |
| 10000 | 0.4576 |
Associated Product
