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NTGD1100LT1G
the part number is NTGD1100LT1G
Part
NTGD1100LT1G
Manufacturer
Description
MOSFET N/P-CH 8V 3.3A 6-TSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Transistor Application SWITCHING
Surface Mount YES
Radiation Hardening No
Drain to Source Voltage (Vdss) 8V
Drain to Source Resistance 80mOhm
Element Configuration Dual
Package / Case SOT-23-6 Thin, TSOT-23-6
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Terminal Form GULL WING
Number of Pins 6
Operating Mode ENHANCEMENT MODE
Number of Elements 2
Max Power Dissipation 830mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ
Voltage - Load 1.8V~8V
Mounting Type Surface Mount
Pin Count 6
Resistance 40MOhm
Power Dissipation 830mW
Packaging Tape & Reel (TR)
FET Technology METAL-OXIDE SEMICONDUCTOR
Transistor Element Material SILICON
Output Type P-Channel
Output Configuration High Side
Terminal Finish Tin (Sn)
Number of Terminations 6
Height 1mm
ECCN Code EAR99
Width 1.7mm
Lead Free Lead Free
Pbfree Code yes
RoHS Status ROHS3 Compliant
Drain to Source Breakdown Voltage 8V
Gate to Source Voltage (Vgs) 8V
Current Rating 3.3A
Switch Type General Purpose
Ratio - Input:Output 1:1
Rds On (Typ) 40m Ω
JESD-609 Code e3
Factory Lead Time 2 Weeks
Number of Outputs 1
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Continuous Drain Current (ID) 3.3A
Type General Purpose
Length 3.1mm
Subcategory Other Transistors
Part Status Active
Published 2001
Interface On/Off
Base Part Number NTGD1100L
Voltage - Rated DC 20V
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