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NVD5117PLT4G-VF01
the part number is NVD5117PLT4G-VF01
Part
NVD5117PLT4G-VF01
Manufacturer
Description
Single P-Channel Power MOSFET -60V, -61A, 16mO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Uni Price $2.9848 $2.9251 $2.8356 $2.746 $2.6266 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 60V
Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 40 Weeks
Email: sale@shengyuic.com
FET Type: P-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Other Names: NVD5117PLT4G NVD5117PLT4G-VF01TR NVD5117PLT4GOSTR NVD5117PLT4GOSTR-ND
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 29A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
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