shengyuic
shengyuic
sale@shengyuic.com
S4PBHM3_B/H
the part number is S4PBHM3_B/H
Part
S4PBHM3_B/H
Description
DIODE GEN PURP 100V 4A TO277A
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.1919 $0.1881 $0.1823 $0.1765 $0.1689 Get Quotation!
Specification
Current-ReverseLeakage@Vr 30pF @ 4V, 1MHz
Speed Standard Recovery >500ns, > 200mA (Io)
F AEC-Q101
ProductStatus Active
Package/Case TO-277, 3-PowerDFN
Grade 2.5 µs
Capacitance@Vr Automotive
ReverseRecoveryTime(trr) 10 µA @ 100 V
MountingType Surface Mount
Series eSMP®
Qualification
SupplierDevicePackage TO-277A (SMPC)
Voltage-Forward(Vf)(Max)@If 1.1 V @ 4 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 100 V
OperatingTemperature-Junction -55°C ~ 150°C
Current-AverageRectified(Io) 4A
Package Tape & Reel (TR)
Related Parts For S4PBHM3_B/H
S4PB-M3/86A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 4A TO277A

S4PB-M3/87A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 4A TO277A

S4PBHM3/86A

Vishay

DIODE GEN PURP 100V 4A TO277A

S4PBHM3_A/H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 4A TO277A

S4PBHM3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 4A TO277A

S4PBHM3_B/H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 4A TO277A

S4PBHM3_B/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 4A TO277A

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!