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SI5853DC-T1-E3
the part number is SI5853DC-T1-E3
Part
SI5853DC-T1-E3
Manufacturer
Description
MOSFET P-CH 20V 2.7A 1206-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage -20 V
Nominal Vgs -1 V
Gate to Source Voltage (Vgs) 8 V
REACH SVHC Unknown
Mount Surface Mount
Fall Time 30 ns
Turn-On Delay Time 12 ns
RoHS Compliant
Radiation Hardening No
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) -20 V
Power Dissipation 1.1 W
Drain to Source Resistance 110 mΩ
Continuous Drain Current (ID) -3.6 A
Rise Time 30 ns
Turn-Off Delay Time 30 ns
Number of Pins 8
Number of Elements 1
Rds On Max 110 mΩ
Case/Package SMD/SMT
Max Power Dissipation 1.1 W
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