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SI6413DQ-T1-GE3
the part number is SI6413DQ-T1-GE3
Part
SI6413DQ-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 7.2A 8TSSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 800mV @ 400µA
Vgs(th)(Max)@Id ±8V
Vgs 105 nC @ 5 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature 8-TSSOP
DriveVoltage(MaxRdsOn 1.8V, 4.5V
ProductStatus Active
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType 8-TSSOP (0.173, 4.40mm Width)
InputCapacitance(Ciss)(Max)@Vds 1.05W (Ta)
Series TrenchFET®
Qualification
SupplierDevicePackage -
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.2A (Ta)
Vgs(Max) -
MinRdsOn) 10mOhm @ 8.8A, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) Surface Mount
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