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SI6463BDQ-T1-E3
the part number is SI6463BDQ-T1-E3
Part
SI6463BDQ-T1-E3
Manufacturer
Description
MOSFET P-CH 20V 6.2A 8-TSSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
Specification
RdsOn(Max)@Id 800mV @ 250µA
Vgs(th)(Max)@Id -
Vgs 60 nC @ 5 V
FETFeature -
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature 8-TSSOP
DriveVoltage(MaxRdsOn -
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType 8-TSSOP (0.173, 4.40mm Width)
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage -
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 6.2A (Ta)
Vgs(Max) -
MinRdsOn) 15mOhm @ 7.4A, 4.5V
Package Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
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