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SIA910EDJ-T1-GE3
the part number is SIA910EDJ-T1-GE3
Part
SIA910EDJ-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 12V 4.5A SC-70-6
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Uni Price $0.4731 $0.4636 $0.4494 $0.4353 $0.4163 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 400 mV
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Manufacturer Package Identifier C-07431-DUAL
Fall Time 12 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 12 V
Drain to Source Resistance 23 mΩ
Element Configuration Dual
Number of Channels 2
Number of Pins 6
Height 850 µm
Number of Elements 2
Input Capacitance 455 pF
Lead Free Lead Free
Rds On Max 28 mΩ
Max Power Dissipation 7.8 W
Max Junction Temperature (Tj) 150 °C
Drain to Source Breakdown Voltage 12 V
Nominal Vgs 400 mV
Gate to Source Voltage (Vgs) 8 V
REACH SVHC Unknown
Turn-On Delay Time 10 ns
Weight 28.009329 mg
Resistance 28 MΩ
Max Operating Temperature 150 °C
Power Dissipation 1.9 W
Continuous Drain Current (ID) 4.5 A
Rise Time 12 ns
Turn-Off Delay Time 25 ns
Packaging Digi-Reel®
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