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SIHB100N60E-GE3
the part number is SIHB100N60E-GE3
Part
SIHB100N60E-GE3
Manufacturer
Description
MOSFET N-CH 600V 30A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $5.368 $5.2606 $5.0996 $4.9386 $4.7238 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 50 nC @ 10 V
FETFeature 208W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-263 (D2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series E
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) 1851 pF @ 100 V
MinRdsOn) 100mOhm @ 13A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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