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SIR802DP-T1-GE3
the part number is SIR802DP-T1-GE3
Part
SIR802DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 20V 30A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 1.5V @ 250µA
Vgs(th)(Max)@Id ±12V
Vgs 32 nC @ 10 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature PowerPAK® SO-8
DriveVoltage(MaxRdsOn 2.5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds 4.6W (Ta), 27.7W (Tc)
Series TrenchFET®
Qualification
SupplierDevicePackage 1785 pF @ 10 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) -
MinRdsOn) 5mOhm @ 10A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
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