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SIRA02DP-T1-GE3
the part number is SIRA02DP-T1-GE3
Part
SIRA02DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 50A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $1.462 $1.4328 $1.3889 $1.345 $1.2866 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 1.1 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 16 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 30 V
Drain to Source Resistance 2 mΩ
Element Configuration Single
Number of Channels 1
Number of Pins 8
Height 1.12 mm
Number of Elements 1
Input Capacitance 6.15 nF
Width 5.26 mm
Rds On Max 2 mΩ
Max Power Dissipation 50 W
Drain to Source Breakdown Voltage 30 V
Nominal Vgs 1.1 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC Unknown
Turn-On Delay Time 31 ns
Weight 506.605978 mg
Max Operating Temperature 150 °C
Power Dissipation 5 W
Continuous Drain Current (ID) 50 A
Length 6.25 mm
Turn-Off Delay Time 42 ns
Contact Plating Tin
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