shengyuic
shengyuic
sale@shengyuic.com
SIS406DN-T1-GE3
the part number is SIS406DN-T1-GE3
Part
SIS406DN-T1-GE3
Manufacturer
Description
ST
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.8268 $0.8103 $0.7855 $0.7607 $0.7276 Get Quotation!
Specification
Min Operating Temperature -55 °C
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 12 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 30 V
Drain to Source Resistance 11 mΩ
Element Configuration Single
Number of Channels 1
Number of Pins 8
Height 1.04 mm
Number of Elements 1
Input Capacitance 1.1 nF
Width 3.05 mm
Rds On Max 11 mΩ
Max Power Dissipation 1.5 W
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 25 V
Turn-On Delay Time 20 ns
Max Operating Temperature 150 °C
Power Dissipation 1.5 W
Continuous Drain Current (ID) 9 A
Rise Time 12 ns
Length 3.05 mm
Turn-Off Delay Time 25 ns
Related Parts For SIS406DN-T1-GE3
SIS402DN

VISHAY

XSTRFETN-CHANNELSIS4

SIS402DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A PPAK1212-8

SIS406DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 9A PPAK1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!