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SISA10DN-T1-GE3
the part number is SISA10DN-T1-GE3
Part
SISA10DN-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 30A 1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $1.07 $1.0486 $1.0165 $0.9844 $0.9416 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 1.1 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 20 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 30 V
Drain to Source Resistance 3.7 mΩ
Element Configuration Dual
Number of Channels 1
Number of Pins 8
Height 1.12 mm
Number of Elements 1
Input Capacitance 2.425 nF
Width 3.4 mm
Rds On Max 3.7 mΩ
Max Power Dissipation 39 W
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC Unknown
Turn-On Delay Time 20 ns
Max Operating Temperature 150 °C
Power Dissipation 3.6 W
Continuous Drain Current (ID) 30 A
Length 3.4 mm
Turn-Off Delay Time 27 ns
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