SPP80N03S2L-04

Part

SPP80N03S2L-04

Manufacturer

Description

Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Lead Free/ROHS

Datasheets

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Specification

Min Operating Temperature	-55 °C
Drain to Source Breakdown Voltage	30 V
Gate to Source Voltage (Vgs)	20 V
Mount	Through Hole
Current Rating	80 A
Fall Time	19 ns
Turn-On Delay Time	13 ns
RoHS	Compliant
Radiation Hardening	No
Max Operating Temperature	175 °C
Drain to Source Voltage (Vdss)	30 V
Power Dissipation	188 W
Drain to Source Resistance	4.2 mΩ
Continuous Drain Current (ID)	80 A
Element Configuration	Single
Rise Time	20 ns
Turn-Off Delay Time	54 ns
Number of Pins	3
Input Capacitance	3.9 nF
Voltage Rating (DC)	30 V
Lead Free	Lead Free
Rds On Max	4.2 mΩ
Case/Package	TO-220-3
Max Power Dissipation	188 W

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