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STI30NM60N
the part number is STI30NM60N
Part
STI30NM60N
Manufacturer
Description
MOSFET N-CH 600V 25A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 91 nC @ 10 V
Vgs(th)(Max)@Id -
Vgs 2700 pF @ 50 V
FETFeature Through Hole
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature TO-262-3 Long Leads, I2PAK, TO-262AA
DriveVoltage(MaxRdsOn 130mOhm @ 12.5A, 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType 10V
InputCapacitance(Ciss)(Max)@Vds 150°C (TJ)
Series MDmesh™ II
Qualification
SupplierDevicePackage ±30V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 25A (Tc)
Vgs(Max) 190W (Tc)
MinRdsOn) 4V @ 250µA
Package Tube
PowerDissipation(Max) TO-262 (I2PAK)
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