shengyuic
shengyuic
sale@shengyuic.com
SUD50N02-06-E3
the part number is SUD50N02-06-E3
Part
SUD50N02-06-E3
Manufacturer
Description
TO-252
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 20 V
Gate to Source Voltage (Vgs) 12 V
Mount Surface Mount
Fall Time 100 ns
Turn-On Delay Time 25 ns
RoHS Compliant
Radiation Hardening No
Max Operating Temperature 175 °C
Drain to Source Voltage (Vdss) 20 V
Power Dissipation 8.3 W
Drain to Source Resistance 6 mΩ
Continuous Drain Current (ID) 30 A
Element Configuration Single
Rise Time 120 ns
Turn-Off Delay Time 80 ns
Number of Pins 3
Number of Elements 1
Input Capacitance 6.6 nF
Rds On Max 6 mΩ
Case/Package TO-252-3
Max Power Dissipation 100 W
Related Parts For SUD50N02-06-E3
SUD50N02-04P-E3

Vishay Siliconix

MOSFET N-CH 20V 50A TO252

SUD50N02-06

Vishay Siliconix

N-Channel MOSFETs 20V 30A 100W

SUD50N02-06P-E3

Vishay

MOSFET N-CH 20V 50A TO252

SUD50N02-06P-E3

Vishay Siliconix

MOSFET N-CH 20V 50A TO252

SUD50N02-06P-GE3

Vishay Siliconix

MOSFET N-CH 20V 50A TO252AA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!