shengyuic
shengyuic
sale@shengyuic.com
TPN3300ANH,LQ
the part number is TPN3300ANH,LQ
Part
TPN3300ANH,LQ
Description
MOSFET N-CH 100V 9.4A 8TSON
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.9288 $0.9102 $0.8824 $0.8545 $0.8173 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 100µA
Vgs(th)(Max)@Id ±20V
Vgs 11 nC @ 10 V
FETFeature 700mW (Ta), 27W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature -
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case 8-TSON Advance (3.3x3.3)
GateCharge(Qg)(Max)@Vgs 8-PowerVDFN
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds -
Series U-MOSVIII-H
Qualification
SupplierDevicePackage Surface Mount
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
Vgs(Max) 880 pF @ 50 V
MinRdsOn) 33mOhm @ 4.7A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) 150°C (TJ)
Related Parts For TPN3300ANH,LQ
TPN30008NH,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 9.6A 8TSON

TPN30008NHLQ(S

Toshiba

Compliant Surface Mount 3.6 ns 3.8 ns 8 1.9 W 1 11 ns

TPN3021

STMicroelectronics

THYRISTOR 28V 100A 8SOIC

TPN3021RL

STMicroelectronics

THYRISTOR 28V 100A 8SOIC

TPN3300ANH,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 9.4A 8TSON

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!