1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 90µA |
---|---|
Vgs(th)(Max)@Id | 2350 pF @ 100 V |
Vgs | ±20V |
FETFeature | -55°C ~ 175°C (TJ) |
DraintoSourceVoltage(Vdss) | 250 V |
OperatingTemperature | PG-TO262-3 |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-262-3 Long Leads, I2PAK, TO-262AA |
InputCapacitance(Ciss)(Max)@Vds | 136W (Tc) |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | 29 nC @ 10 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 60mOhm @ 25A, 10V |
Package | Tube |
PowerDissipation(Max) | Through Hole |
Infineon
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Infineon
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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