sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $5.14 | $5.0372 | $4.883 | $4.7288 | $4.5232 | Get Quotation! |
| Min Operating Temperature | -40 °C |
|---|---|
| Drain to Source Breakdown Voltage | 600 V |
| On-State Resistance | 105 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Mount | Through Hole |
| Turn-On Delay Time | 10 ns |
| RoHS | Compliant |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation | 255 W |
| Drain to Source Resistance | 105 mΩ |
| Continuous Drain Current (ID) | 31 A |
| Element Configuration | Single |
| Rise Time | 5 ns |
| Turn-Off Delay Time | 60 ns |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 500 |
| Input Capacitance | 2.8 nF |
| Rds On Max | 105 mΩ |
| Case/Package | TO-262-3 |
| Max Power Dissipation | 255 W |
Infineon
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Infineon
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
sale@shengyuic.com
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