1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $1.17 | $1.1466 | $1.1115 | $1.0764 | $1.0296 | Get Quotation! |
Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 20 V |
Mount | Through Hole |
Current Rating | 11 A |
Turn-On Delay Time | 10 ns |
RoHS | Compliant |
Max Dual Supply Voltage | 600 V |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation | 96 W |
Drain to Source Resistance | 299 mΩ |
Continuous Drain Current (ID) | 11 A |
Rise Time | 5 ns |
Turn-Off Delay Time | 40 ns |
Halogen Free | Halogen Free |
Number of Pins | 3 |
Number of Elements | 1 |
Input Capacitance | 1.1 nF |
Voltage Rating (DC) | 650 V |
Lead Free | Lead Free |
Rds On Max | 299 mΩ |
Case/Package | TO-262-3 |
Max Power Dissipation | 96 W |
Infineon
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Infineon
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!