1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.95 | $0.931 | $0.9025 | $0.874 | $0.836 | Get Quotation! |
Min Operating Temperature | -55 °C |
---|---|
Mount | Through Hole |
RoHS | Compliant |
Radiation Hardening | No |
Drain to Source Voltage (Vdss) | 600 V |
Drain to Source Resistance | 350 mΩ |
Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
Number of Pins | 3 |
Number of Elements | 1 |
Input Capacitance | 790 pF |
Lead Free | Lead Free |
Rds On Max | 385 mΩ |
Max Power Dissipation | 83 W |
On-State Resistance | 385 mΩ |
Gate to Source Voltage (Vgs) | 20 V |
Current Rating | 9 A |
Turn-On Delay Time | 10 ns |
Max Dual Supply Voltage | 600 V |
Max Operating Temperature | 150 °C |
Power Dissipation | 83 W |
Continuous Drain Current (ID) | 9 A |
Rise Time | 5 ns |
Turn-Off Delay Time | 40 ns |
Halogen Free | Halogen Free |
Package Quantity | 500 |
Voltage Rating (DC) | 650 V |
Case/Package | TO-262 |
Infineon
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Infineon
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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