1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
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Drain to Source Breakdown Voltage | 600 V |
Nominal Vgs | 3 V |
Gate to Source Voltage (Vgs) | 20 V |
REACH SVHC | No SVHC |
Dual Supply Voltage | 650 V |
Termination | Through Hole |
Fall Time | 17 ns |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation | 60 W |
Drain to Source Resistance | 600 mΩ |
Continuous Drain Current (ID) | 6.1 A |
Element Configuration | Single |
Rise Time | 12 ns |
Turn-Off Delay Time | 75 ns |
Halogen Free | Halogen Free |
Number of Pins | 3 |
Input Capacitance | 550 pF |
Rds On Max | 600 mΩ |
Case/Package | TO-262-3 |
Max Power Dissipation | 60 W |
Infineon
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Infineon
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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