shengyuic
shengyuic
sale@shengyuic.com
IPP320N20N3GXKSA1
the part number is IPP320N20N3GXKSA1
Part
IPP320N20N3GXKSA1
Manufacturer
Description
MOSFET N-CH 200V 34A TO220-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.8864 $3.8087 $3.6921 $3.5755 $3.42 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 90µA
Vgs(th)(Max)@Id ±20V
Vgs 29 nC @ 10 V
FETFeature 136W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO220-3
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 34A (Tc)
Vgs(Max) 2350 pF @ 100 V
MinRdsOn) 32mOhm @ 34A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPP320N20N3GXKSA1
IPP319N20NM6AKSA1

Infineon Technologies

TRENCH >=100V

IPP320N20N3GXKSA1

Infineon Technologies

MOSFET N-CH 200V 34A TO220-3

IPP330P10NMAKSA1

Infineon Technologies

TRENCH >=100V PG-TO220-3

IPP35CN10N G

Infineon Technologies

MOSFET N-CH 100V 27A TO220-3

IPP35CN10NG

INFINEON

Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP35CN10NGXKSA1

Infineon Technologies

MOSFET N-CH 100V 27A TO220-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!