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IPP35CN10N G
the part number is IPP35CN10N G
Part
IPP35CN10N G
Manufacturer
Description
MOSFET N-CH 100V 27A TO220-3
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Specification
RdsOn(Max)@Id 4V @ 29µA
Vgs(th)(Max)@Id ±20V
Vgs 24 nC @ 10 V
FETFeature 58W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PG-TO220-3
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 27A (Tc)
Vgs(Max) 1570 pF @ 50 V
MinRdsOn) 35mOhm @ 27A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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