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NC1M120C12HTNG
the part number is NC1M120C12HTNG
Part
NC1M120C12HTNG
Manufacturer
Description
SiC MOSFET N 1200V 12mohm 214A
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $85.9815 $84.2619 $81.6824 $79.103 $75.6637 Get Quotation!
Specification
RdsOn(Max)@Id 3.5V @ 40mA
Vgs(th)(Max)@Id +20V, -5V
Vgs -
FETFeature 938W (Ta)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 20V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247-4L
InputCapacitance(Ciss)(Max)@Vds -
Series NC1M
Qualification
SupplierDevicePackage TO-247-4
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 214A (Tc)
Vgs(Max) 8330 pF @ 1000 V
MinRdsOn) 20mOhm @ 100A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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