1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $38.324 | $37.5575 | $36.4078 | $35.2581 | $33.7251 | Get Quotation! |
RdsOn(Max)@Id | 2.8V @ 10mA |
---|---|
Vgs(th)(Max)@Id | +20V, -5V |
Vgs | - |
FETFeature | 375W (Ta) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 20V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247-3L |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | NC1M |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 76A (Tc) |
Vgs(Max) | 2534 pF @ 1000 V |
MinRdsOn) | 40mOhm @ 35A, 20V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
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