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SI7601DN-T1-GE3
the part number is SI7601DN-T1-GE3
Part
SI7601DN-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 16A PPAK1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 1.6V @ 250µA
Vgs(th)(Max)@Id ±12V
Vgs 27 nC @ 5 V
FETFeature 3.8W (Ta), 52W (Tc)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 2.5V, 4.5V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PowerPAK® 1212-8
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® 1212-8
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 16A (Tc)
Vgs(Max) 1870 pF @ 10 V
MinRdsOn) 19.2mOhm @ 11A, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) -50°C ~ 150°C (TJ)
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