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SI7613DN-T1-GE3
the part number is SI7613DN-T1-GE3
Part
SI7613DN-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 35A 1212-8 PPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Uni Price $1.0506 $1.0296 $0.9981 $0.9666 $0.9245 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage -1 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 9 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 20 V
Drain to Source Resistance 8.7 mΩ
Number of Channels 1
Number of Pins 8
Height 1.04 mm
Number of Elements 1
Input Capacitance 2.62 nF
Width 3.05 mm
Rds On Max 8.7 mΩ
Max Power Dissipation 52.1 W
Drain to Source Breakdown Voltage -20 V
Gate to Source Voltage (Vgs) 16 V
REACH SVHC Unknown
Turn-On Delay Time 14 ns
Max Operating Temperature 150 °C
Power Dissipation 3.8 W
Continuous Drain Current (ID) 17 A
Rise Time 7 ns
Length 3.05 mm
Turn-Off Delay Time 42 ns
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