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SI7682DP-T1-E3
the part number is SI7682DP-T1-E3
Part
SI7682DP-T1-E3
Manufacturer
Description
MOSFET N-CH 30V 20A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 20 V
Mount Surface Mount
Fall Time 10 ns
Turn-On Delay Time 18 ns
RoHS Compliant
Radiation Hardening No
Resistance 9 mΩ
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) 30 V
Power Dissipation 5 W
Drain to Source Resistance 9 mΩ
Continuous Drain Current (ID) 17.5 A
Element Configuration Single
Rise Time 82 ns
Turn-Off Delay Time 18 ns
Number of Pins 8
Number of Elements 1
Input Capacitance 1.595 nF
Lead Free Lead Free
Rds On Max 9 mΩ
Max Power Dissipation 27.5 W
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