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SI7703EDN-T1-E3
the part number is SI7703EDN-T1-E3
Part
SI7703EDN-T1-E3
Manufacturer
Description
MOSFET P-CH 20V 4.3A PPAK1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 1V @ 800µA
Vgs(th)(Max)@Id ±12V
Vgs 18 nC @ 4.5 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature PowerPAK® 1212-8
DriveVoltage(MaxRdsOn 1.8V, 4.5V
ProductStatus Active
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PowerPAK® 1212-8
InputCapacitance(Ciss)(Max)@Vds 1.3W (Ta)
Series TrenchFET®
Qualification
SupplierDevicePackage -
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 4.3A (Ta)
Vgs(Max) Schottky Diode (Isolated)
MinRdsOn) 48mOhm @ 6.3A, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) Surface Mount
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