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SI7703EDN-T1-GE3
the part number is SI7703EDN-T1-GE3
Part
SI7703EDN-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 4.3A 1212-8 PPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $0.38 $0.3724 $0.361 $0.3496 $0.3344 Get Quotation!
Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 20 V
Gate to Source Voltage (Vgs) 12 V
Threshold Voltage -1 V
REACH SVHC No SVHC
Mount Surface Mount
Fall Time 6 ns
Turn-On Delay Time 4 ns
RoHS Compliant
Radiation Hardening No
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) -20 V
Power Dissipation 1.3 W
Drain to Source Resistance 41 mΩ
Continuous Drain Current (ID) 4.3 A
Rise Time 6 ns
Turn-Off Delay Time 23 ns
Number of Pins 8
Rds On Max 48 mΩ
Max Power Dissipation 1.3 W
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