shengyuic
shengyuic
sale@shengyuic.com
STI100N10F7
the part number is STI100N10F7
Part
STI100N10F7
Manufacturer
Description
MOSFET N-CH 100V 80A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 61 nC @ 10 V
FETFeature 150W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series STripFET™
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 80A (Tc)
Vgs(Max) -
MinRdsOn) 8mOhm @ 40A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For STI100N10F7
STI100N10F7

STMicroelectronics

MOSFET N-CH 100V 80A I2PAK

STI10N62K3

STMicroelectronics

MOSFET N-CH 620V 8.4A I2PAK

STI10NM60N

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

STI11NM60ND

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

STI11NM80

STMicroelectronics

MOSFET N-CH 800V 11A I2PAK

STI12N65M5

STMicroelectronics

MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!