shengyuic
shengyuic
sale@shengyuic.com
STI10NM60N
the part number is STI10NM60N
Part
STI10NM60N
Manufacturer
Description
MOSFET N-CH 600V 10A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.6196 $2.5672 $2.4886 $2.41 $2.3052 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 19 nC @ 10 V
FETFeature 70W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series MDmesh™ II
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 10A (Tc)
Vgs(Max) 540 pF @ 50 V
MinRdsOn) 550mOhm @ 4A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For STI10NM60N
STI100N10F7

STMicroelectronics

MOSFET N-CH 100V 80A I2PAK

STI10N62K3

STMicroelectronics

MOSFET N-CH 620V 8.4A I2PAK

STI10NM60N

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

STI11NM60ND

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

STI11NM80

STMicroelectronics

MOSFET N-CH 800V 11A I2PAK

STI12N65M5

STMicroelectronics

MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!