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TW083N65C,S1F
the part number is TW083N65C,S1F
Part
TW083N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 83MOH
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $12.546 $12.2951 $11.9187 $11.5423 $11.0405 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 600µA
Vgs(th)(Max)@Id +25V, -10V
Vgs 28 nC @ 18 V
FETFeature 111W (Tc)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) 873 pF @ 400 V
MinRdsOn) 113mOhm @ 15A, 18V
Package Tube
PowerDissipation(Max) 175°C
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