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TW083Z65C,S1F
the part number is TW083Z65C,S1F
Part
TW083Z65C,S1F
Description
G3 650V SIC-MOSFET TO-247-4L 83
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $12.4805 $12.2309 $11.8565 $11.4821 $10.9828 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 600µA
Vgs(th)(Max)@Id +25V, -10V
Vgs 28 nC @ 18 V
FETFeature 111W (Tc)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247-4L(X)
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-4
FETType N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) 873 pF @ 400 V
MinRdsOn) 118mOhm @ 15A, 18V
Package Tube
PowerDissipation(Max) 175°C
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