ICE20N60B
Part NoICE20N60B
ManufacturerIceMOS Technology
DescriptionSuperjunction MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 10A, 10V
RdsOn(Max)@Id3.9V @ 250µA
Vgs59 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2064 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature236W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-263
GateCharge(Qg)(Max)@VgsTO-263-3, D2PAK (2 Leads + Tab), Variant
Grade
Qualification
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